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2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS

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Workstation

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Machine Enclosure Machine Frame

The automobile inspection fixture frame is assembled with aluminum profiles and accessories, and the product is designed according to customer requirements Appropriate frame structure, using heavy-duty profiles and supporting connectors, beautiful products , Atmosphere, high strength, please consult APS online customer service for details


TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) z Specified 12-5V, 28MHz Characteristics z Output Power ! Po = 100WPEP z Power Gain ! Gp = 13dB z Collector Efficiency ! ηC = 35% (Min-) z Intermodulation Distortion ! IMD = −24dB(Max-) (MIL Standard) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

SPEC SHEET ON 2SC2879 | WorldwideDX Radio

2SC2879 Datasheet pdf - TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) - TOSHIBA page 2 , input power , 6 watts typical 10 watts max page 1 , maxium collector power dissipation 250 watts _ look at the graphs on page 3 for the power input to output ratios _

2SC2879 RF/VHF/UHF Toshiba Transistor, Linear Power Amplifier

2sc2879 rf/vhf/uhf toshiba transistor 2~30mhz ssb linear power amplifier

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) z Specified 12.5V. 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency : ηC = 35% (Min.) z Intermodulation Distortion : IMD = −24dB(Max.) (MIL Standard) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

2SC2879 datasheet(1/2 Pages) TOSHIBA | TRANSISTOR (2~30MHz

2SC2879 Datasheet(PDF) 1 Page _ Toshiba Semiconductor: Part No. 2SC2879: Description TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE): Download 2 Pages

HG 2SC2879 C -

Designed primarily for 2·30MHz SSB linear power amplifier applications (low supply voltage use) • Specified 12,5V, 28MHz Characteristics • PO = 150W PEP(Min,) • GP = 10,8 dB (Min) @28M • Omnigold™ Metalization System

HG 2SC2879 Transistor - Trucks CB

HG 2SC2879 Transistor / HG 2SC2879 Transistor SKU: Quantity, Add To Cart, Sold Out, 2:30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS, Specified 12,5V, Output Power ,,,

HG 2SC2879 C -

Designed primarily for 2,30MHz SSB linear power amplifier applications (low supply voltage use) • Specified 12.5V, 28MHz Characteristics • PO = 150W PEP(Min.) • GP = 10.8 dB (Min) @28M • Omnigold™ Metalization System

(2sc2879 2~30mhz Ssb Linear Power Amplifier Applications

(2sc2879 2~30mhz Ssb Linear Power Amplifier Applications)transistors 2sc2879 , Find Complete Details about (2sc2879 2~30mhz Ssb Linear Power Amplifier Applications)transistors 2sc2879,Transistors 2sc2879,2sc2879,2~30mhz Ssb Linear Power Amplifier Applications Transistors 2sc2879 from Transistors Supplier or Manufacturer-Shenzhen Jowin Tehnology Co|, Ltd|